10.60507/FK2/9HPTQBHougardy, StefanStefanHougardy0000-0001-8656-3418University of BonnKlotz, BenjaminBenjaminKlotzUniversity of BonnSchürks, Jan MalteJan MalteSchürks0009-0008-0891-8808University of BonnSettels, ArminArminSettels0009-0001-3981-3178University of BonnWerner, TobiasTobiasWerner0009-0006-4727-2312IBMbonndata2026Computer and Information ScienceMathematical SciencesHougardy, StefanStefanHougardyUniversity of Bonn2026-07-282026-07-302063355231876478text/markdownimage/pngapplication/zip1.0CC BY-NC 4.0This data set contains all cell data and experimental results from our ICCAD 2026 paper, “Optimal Transistor-Level Layout of Single- and Multi-Row Cells for 2nm and Beyond”, by Stefan Hougardy, Benjamin Klotz, Malte Schürks, Armin Settels, and Tobias Werner.