<?xml version='1.0' encoding='UTF-8'?><metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns="http://dublincore.org/documents/dcmi-terms/"><dcterms:title>Schematics and Layouts for NS3K-Based Cells</dcterms:title><dcterms:identifier>https://doi.org/10.60507/FK2/9HPTQB</dcterms:identifier><dcterms:creator>Hougardy, Stefan</dcterms:creator><dcterms:creator>Klotz, Benjamin</dcterms:creator><dcterms:creator>Schürks, Jan Malte</dcterms:creator><dcterms:creator>Settels, Armin</dcterms:creator><dcterms:creator>Werner, Tobias</dcterms:creator><dcterms:publisher>bonndata</dcterms:publisher><dcterms:issued>2026-07-30</dcterms:issued><dcterms:modified>2026-07-30T14:06:13Z</dcterms:modified><dcterms:description>This data set contains all cell data and experimental results from our ICCAD 2026 paper, “Optimal Transistor-Level Layout of Single- and Multi-Row Cells for 2nm and Beyond”, by Stefan Hougardy, Benjamin Klotz, Malte Schürks, Armin Settels, and
Tobias Werner.</dcterms:description><dcterms:subject>Computer and Information Science</dcterms:subject><dcterms:subject>Mathematical Sciences</dcterms:subject><dcterms:isReferencedBy>doi</dcterms:isReferencedBy><dcterms:date>2026-07-30</dcterms:date><dcterms:contributor>Hougardy, Stefan</dcterms:contributor><dcterms:dateSubmitted>2026-07-28</dcterms:dateSubmitted><dcterms:license>CC BY-NC 4.0</dcterms:license></metadata>