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Part 1: Document Description
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Citation |
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Title: |
Schematics and Layouts for NS3K-Based Cells |
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Identification Number: |
doi:10.60507/FK2/9HPTQB |
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Distributor: |
bonndata |
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Date of Distribution: |
2026-07-30 |
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Version: |
1 |
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Bibliographic Citation: |
Hougardy, Stefan; Klotz, Benjamin; Schürks, Jan Malte; Settels, Armin; Werner, Tobias, 2026, "Schematics and Layouts for NS3K-Based Cells", https://doi.org/10.60507/FK2/9HPTQB, bonndata, V1 |
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Citation |
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Title: |
Schematics and Layouts for NS3K-Based Cells |
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Identification Number: |
doi:10.60507/FK2/9HPTQB |
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Authoring Entity: |
Hougardy, Stefan (University of Bonn) |
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Klotz, Benjamin (University of Bonn) |
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Schürks, Jan Malte (University of Bonn) |
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Settels, Armin (University of Bonn) |
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Werner, Tobias (IBM) |
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Distributor: |
bonndata |
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Access Authority: |
Hougardy, Stefan |
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Depositor: |
Hougardy, Stefan |
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Date of Deposit: |
2026-07-28 |
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Holdings Information: |
https://doi.org/10.60507/FK2/9HPTQB |
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Study Scope |
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Keywords: |
Computer and Information Science, Mathematical Sciences |
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Abstract: |
This data set contains all cell data and experimental results from our ICCAD 2026 paper, “Optimal Transistor-Level Layout of Single- and Multi-Row Cells for 2nm and Beyond”, by Stefan Hougardy, Benjamin Klotz, Malte Schürks, Armin Settels, and Tobias Werner. |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Notes: |
<a href="http://creativecommons.org/licenses/by-nc/4.0">CC BY-NC 4.0</a> |
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Other Study Description Materials |
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Label: |
layers.png |
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Notes: |
image/png |
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Label: |
ns3k-data.zip |
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Notes: |
application/zip |
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Label: |
README.md |
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Notes: |
text/markdown |